For Reference Only
Part Number | SPB80N06S2L-11 |
OEMstron Part # | SPB80N06S2L-11 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 55V 80A D2PAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SPB80N06S2L-11 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SPB80N06S2L-11 Specifications
Part Number | SPB80N06S2L-11 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 93µA | |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 158W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3-2 | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SPB80N06S2L-11 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
SPB80N06S2L-11 D# SPB80N06S2L-11 Infineon Technologies AG |
Power Transistor, OptiMOS, 55V, 80A, 3-pin(2+tab) TO-263 - Bulk (Alt: SPB80N06S2L-11) RoHS: Not Compliant
|
Americas - 2000 |
Part Number | Description | Stock |
SPB80N06S2L-11 Infineon Technologies AG |
N/A 80 A, 55 V, 0.0147 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PLASTIC, TO-263, 3 PIN |
2000 |
Part Number | Description | Stock |
SPB80N06S2L11 Infineon Technologies AG |
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant
|
Europe - 1280 |
Part Number | Description | Stock |
SPB80N06S2L-11 D# 2156-SPB80N06S2L-11-ND Rochester Electronics LLC |
MOSFET N-CH 55V 80A TO263-3 |
2000 In Stock |
Part Number | Description | Stock |
SPB80N06S2L-11 Infineon Technologies AG |
In stock shipping within 2days |
1193 |
Part Number | Description | Stock |
SPB80N06S2L11 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
15232 |
Part Number | Description | Stock |
SPB80N06S2L-11 Infineon Technologies AG |
OEM/CM Immediate delivery |
58963 |
Part Number | Description | Stock |
SPB80N06S2L-11 D# NS-SPB80N06S2L-11 Infineon Technologies AG |
OEM/CM ONLY |
8435 |
Part Number | Description | Stock |
SPB80N06S2L-11 Infineon Technologies AG |
OptlMOS, 80A, 55V, 0.0147ohm, N-Channel, Power MOSFET RoHS: Not Compliant
|
2000 |
Part Number | Description | Stock |
SPB80N06S2L11 Infineon Technologies AG |
OEM/CM ONLY |
4101 |
Part Number | Description | Stock |
SPB80N06S2L-11 Infineon Technologies AG |
IN stock Immediate delivery |
58948 |
Part Number | Description | Stock |
SPB80N06S2L-11 Texas Instruments |
shipping today |
1324 |
SPB80N06S2L-11 (2N06L11) Infineon Technologies AG |
shipping today |
651 |
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