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Part Number | SPD18P06PGBTMA1 |
OEMstron Part # | SPD18P06PGBTMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 60V 18.6A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SPD18P06PGBTMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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SPD18P06PGBTMA1 Specifications
Part Number | SPD18P06PGBTMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | SIPMOS® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 18.6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 80W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
SPD18P06PGBTMA1 Documents
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