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Part Number | SPI80N06S2-08 |
OEMstron Part # | SPI80N06S2-08 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 55V 80A I2PAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SPI80N06S2-08 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SPI80N06S2-08 Specifications
Part Number | SPI80N06S2-08 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 58A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 215W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3-1 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
SPI80N06S2-08 Documents
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Part Number | Description | Stock |
SPI80N06S2-08 Infineon Technologies AG |
MOSFET N-CH 55V 80A I2PAK |
Contact Us |
Part Number | Description | Stock |
SPI80N06S2-08 D# SPI80N06S2-08-ND Infineon Technologies AG |
MOSFET N-CH 55V 80A TO262-3 |
Limited Supply - Call |
Part Number | Description | Stock |
SPI80N06S2-08 VBsemi Electronics Co Ltd |
In stock shipping within 2days |
2000 |
Part Number | Description | Stock |
SPI80N06S2-08 D# NS-SPI80N06S2-08 Infineon Technologies AG |
OEM/CM ONLY |
7562 |
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