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Part Number | SPP02N60C3HKSA1 |
OEMstron Part # | SPP02N60C3HKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 650V 1.8A TO-220AB |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SPP02N60C3HKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SPP02N60C3HKSA1 Specifications
Part Number | SPP02N60C3HKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | |
Vgs(th) (Max) @ Id | 3.9V @ 80µA | |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 25W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO220-3-1 | |
Package / Case | TO-220-3 |
SPP02N60C3HKSA1 Documents
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Part Number | Description | Stock |
SPP02N60C3HKSA1 D# SPP02N60C3HKSA1-ND Infineon Technologies AG |
MOSFET N-CH 650V 1.8A TO220-3 |
Limited Supply - Call |
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In Stock | 333 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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