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SPP02N60C3HKSA1

SPP02N60C3HKSA1
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For Reference Only

Part Number SPP02N60C3HKSA1
OEMstron Part # SPP02N60C3HKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 1.8A TO-220AB
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SPP02N60C3HKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SPP02N60C3HKSA1 Specifications

Part Number SPP02N60C3HKSA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3

SPP02N60C3HKSA1 Documents

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Part Number Description Stock

SPP02N60C3HKSA1

D# SPP02N60C3HKSA1-ND

Infineon Technologies AG

MOSFET N-CH 650V 1.8A TO220-3

Limited Supply - Call

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