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| Part Number | SSM6J216FE,LF |
| OEMstron Part # | SSM6J216FE-LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CHANNEL 12V 4.8A ES6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM6J216FE,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SSM6J216FE Specifications
| Part Number | SSM6J216FE,LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 3.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 12.7nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | ES6 | |
| Package / Case | SOT-563, SOT-666 |
SSM6J216FE,LF Documents
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