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Part Number | SSM6J502NU,LF |
OEMstron Part # | SSM6J502NU-LF |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P CH 20V 6A 2-2AA1A |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SSM6J502NU,LF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SSM6J502NU Specifications
Part Number | SSM6J502NU,LF | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSVI | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 23.1mOhm @ 4A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 4.5V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 1W (Ta) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 6-UDFNB (2x2) | |
Package / Case | 6-WDFN Exposed Pad |
SSM6J502NU,LF Documents
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