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STB35N65DM2

STB35N65DM2
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For Reference Only

Part Number STB35N65DM2
OEMstron Part # STB35N65DM2
Manufacturer STMicroelectronics
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description NCHANNEL 650 V 0.094 OHM TYP. 28
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models STB35N65DM2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 9 - Mar 14 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

STB35N65DM2 Specifications

Part Number STB35N65DM2
Brand STMicroelectronics
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Series MDmesh™ M2
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 100V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB35N65DM2 Documents

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Qty.Unit PriceExt. Price
1$ 7.3382$ 7.3382
100$ 7.3382$ 733.8200
500$ 7.3382$ 3,669.1000
1000$ 7.3382$ 7,338.2000
2500$ 7.3382$ 18,345.5000

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