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For Reference Only
Part Number | STWA50N65DM2AG |
OEMstron Part # | STWA50N65DM2AG |
Manufacturer | STMicroelectronics |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | POWER TRANSISTORS |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | STWA50N65DM2AG PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 24 - Mar 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
STWA50N65DM2AG Specifications
Part Number | STWA50N65DM2AG | |
Brand | STMicroelectronics | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | STMicroelectronics | |
Series | Automotive, AEC-Q101, MDmesh™ DM2 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 87mOhm @ 19A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 300W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 | |
Package / Case | TO-247-3 |
STWA50N65DM2AG Documents
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In Stock | 244 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 7.1957 | $ 7.1957 |
100 | $ 7.1957 | $ 719.5700 |
500 | $ 7.1957 | $ 3,597.8500 |
1000 | $ 7.1957 | $ 7,195.7000 |
2500 | $ 7.1957 | $ 17,989.2500 |
OEMstron will offer the most competitive prices for you, please refer to the quotations.
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