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Part Number | TK040N65Z,S1F |
OEMstron Part # | TK040N65Z-S1F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | PB-F POWER MOSFET TRANSISTOR TO- |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK040N65Z,S1F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TK040N65Z Specifications
Part Number | TK040N65Z,S1F | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 57A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 28.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 2.85mA | |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 6250pF @ 300V | |
FET Feature | - | |
Power Dissipation (Max) | 360W (Tc) | |
Operating Temperature | 150°C | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 | |
Package / Case | TO-247-3 |
TK040N65Z,S1F Documents
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