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Part Number | TK14C65W,S1Q |
OEMstron Part # | TK14C65W-S1Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 650V 13.7A I2PAK |
Lifecycle | Last Time Buy |
RoHS | No RoHS Information |
EDA/CAD Models | TK14C65W,S1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TK14C65W Specifications
Part Number | TK14C65W,S1Q | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Last Time Buy | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | DTMOSIV | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 250mOhm @ 6.9A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 690µA | |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 300V | |
FET Feature | - | |
Power Dissipation (Max) | 130W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | I2PAK | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
TK14C65W,S1Q Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
TK14C65W,S1Q D# V99:2348_13896110 Toshiba America Electronic Components |
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) I2PAK Tube RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
TK14C65W,S1Q D# TK14C65WS1Q-ND Toshiba America Electronic Components |
MOSFET N-CH 650V 13.7A I2PAK |
Limited Supply - Call |
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