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Part Number | TK25V60X,LQ |
OEMstron Part # | TK25V60X-LQ |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK25V60X,LQ PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
TK25V60X Specifications
Part Number | TK25V60X,LQ | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | DTMOSIV-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 135mOhm @ 7.5A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA | |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 300V | |
FET Feature | - | |
Power Dissipation (Max) | 180W (Tc) | |
Operating Temperature | 150°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | 4-DFN-EP (8x8) | |
Package / Case | 4-VSFN Exposed Pad |
TK25V60X,LQ Documents

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