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| Part Number | TK31N60W,S1VF |
| OEMstron Part # | TK31N60W-S1VF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N CH 600V 30.8A TO247 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TK31N60W,S1VF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TK31N60W Specifications
| Part Number | TK31N60W,S1VF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | DTMOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 15.4A, 10V | |
| Vgs(th) (Max) @ Id | 3.7V @ 1.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V | |
| FET Feature | Super Junction | |
| Power Dissipation (Max) | 230W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 | |
| Package / Case | TO-247-3 |
TK31N60W,S1VF Documents
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