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Part Number | TK4R4P06PL,RQ |
OEMstron Part # | TK4R4P06PL-RQ |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CHANNEL 60V 58A DPAK |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK4R4P06PL,RQ PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TK4R4P06PL Specifications
Part Number | TK4R4P06PL,RQ | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSIX-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 29A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 500µA | |
Gate Charge (Qg) (Max) @ Vgs | 48.2nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3280pF @ 30V | |
FET Feature | - | |
Power Dissipation (Max) | 87W (Tc) | |
Operating Temperature | 175°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | DPAK | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
TK4R4P06PL,RQ Documents
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