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Part Number | TP65H035WS |
OEMstron Part # | TP65H035WS |
Manufacturer | Transphorm |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | GANFET N-CH 650V 46.5A TO247-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TP65H035WS PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TP65H035WS Specifications
Part Number | TP65H035WS | |
Brand | Transphorm | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Transphorm | |
Series | - | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 46.5A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 12V | |
Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 4.8V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V | |
FET Feature | - | |
Power Dissipation (Max) | 156W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
TP65H035WS Documents
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