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TP65H070LDG

TP65H070LDG
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For Reference Only

Part Number TP65H070LDG
OEMstron Part # TP65H070LDG
Manufacturer Transphorm
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description 650 V 25 A GAN FET
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TP65H070LDG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Feb 24 - Mar 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TP65H070LDG Specifications

Part Number TP65H070LDG
Brand Transphorm
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Transphorm
Series TP65H070L
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 400V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN

TP65H070LDG Documents

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