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| Part Number | TPC8115(TE12L,Q,M) |
| OEMstron Part # | TPC8115-TE12L-Q-M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 10A SOP8 2-6J1B |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPC8115(TE12L,Q,M) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 9 - Feb 14 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPC8115(TE12L Specifications
| Part Number | TPC8115(TE12L,Q,M) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSIV | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 115nC @ 5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9130pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOP (5.5x6.0) | |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
TPC8115(TE12L,Q,M) Documents
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| Part Number | Description | Stock |
|
TPC8115(TE12L,Q,M) D# TPC8115(TE12L,Q,M)-ND Toshiba America Electronic Components |
MOSFET P-CH 20V 10A 8SOP |
Limited Supply - Call |
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