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Part Number | TPCC8006-H(TE12LQM |
OEMstron Part # | TPCC8006-H-TE12LQM |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 22A 8TSON |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | TPCC8006-H(TE12LQM PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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TPCC8006-H(TE12LQM Specifications
Part Number | TPCC8006-H(TE12LQM | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSVI-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 200µA | |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 700mW (Ta), 27W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
Package / Case | 8-PowerVDFN |
TPCC8006-H(TE12LQM Documents
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Part Number | Description | Stock |
TPCC8006-H(TE12LQM Toshiba America Electronic Components |
MOSFET N-CH 30V 22A 8TSON |
3000 |
Part Number | Description | Stock |
TPCC8006-H(TE12LQM D# TPCC8006-H(TE12LQMTR-ND Toshiba America Electronic Components |
MOSFET N-CH 30V 22A 8TSON |
Limited Supply - Call |
Part Number | Description | Stock |
TPCC8006-H(TE12LQM D# NS-TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage |
OEM/CM ONLY |
3048 |
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