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For Reference Only
| Part Number | TPCF8B01(TE85L,F,M |
| OEMstron Part # | TPCF8B01-TE85L-F-M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 2.7A VS-8 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPCF8B01(TE85L,F,M PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPCF8B01(TE85L Specifications
| Part Number | TPCF8B01(TE85L,F,M | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSIII | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 330mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | VS-8 (2.9x1.5) | |
| Package / Case | 8-SMD, Flat Lead |
TPCF8B01(TE85L,F,M Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
TPCF8B01(TE85L,F,M D# TPCF8B01(TE85LFMTR-ND Toshiba America Electronic Components |
MOSFET P-CH 20V 2.7A VS-8 |
Limited Supply - Call |
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