Name: TPH6R30ANL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH6R30ANL-L1Q
Rating: 5 (193 reviews)

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Part Number	TPH6R30ANL,L1Q
OEMstron Part #	TPH6R30ANL-L1Q
Manufacturer	Toshiba Semiconductor and Storage
Category	Semiconductors › Transistors › FETs, MOSFETs - Single
Description	X35 PB-F POWER MOSFET TRANSISTOR
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPH6R30ANL,L1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 30 (Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

Part Number	TPH6R30ANL,L1Q
Brand	Toshiba Semiconductor and Storage
Lifecycle	Active
RoHS	No RoHS Information
Product Line	Semiconductors
Category	Transistors
Subcategory	FETs, MOSFETs - Single
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 54W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

TPH6R30ANL Specifications