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Part Number | TPH8R80ANH,L1Q |
OEMstron Part # | TPH8R80ANH-L1Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N CH 100V 32A 8-SOP |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TPH8R80ANH,L1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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TPH8R80ANH Specifications
Part Number | TPH8R80ANH,L1Q | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSVIII-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 8.8mOhm @ 16A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 500µA | |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta), 61W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SOP Advance (5x5) | |
Package / Case | 8-PowerVDFN |
TPH8R80ANH,L1Q Documents
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