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| Part Number | TPN1110ENH,L1Q |
| OEMstron Part # | TPN1110ENH-L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 200V 7.2A 8TSON |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPN1110ENH,L1Q PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPN1110ENH Specifications
| Part Number | TPN1110ENH,L1Q | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
TPN1110ENH,L1Q Documents
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| Part Number | Description | Stock |
|
TPN1110ENH,L1Q D# V36:1790_13897535 Toshiba America Electronic Components |
Trans MOSFET N-CH Si 200V 13A 8-Pin TSON EP Advance T/R RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q D# TPN1110ENH,L1Q Toshiba America Electronic Components |
Trans MOSFET N-CH 200V 13A 8-Pin TSON - Tape and Reel (Alt: TPN1110ENH,L1Q) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q(M D# TPN1110ENH,L1Q(M Toshiba America Electronic Components |
Trans MOSFET N-CH 200V 13A 8-Pin TSON (Alt: TPN1110ENH,L1Q(M) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q(M D# C1S751201247919 Toshiba America Electronic Components |
MOSFET RoHS: Not Compliant
pbFree: No
Min Qty: 5
Container: Cut Tape
|
5000 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q D# TPN1110ENHL1QCT-ND Toshiba America Electronic Components |
MOSFET N-CH 200V 7.2A 8TSON |
9190 In Stock |
| Part Number | Description | Stock |
|
TPN1110ENHL1Q Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
5950 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q Toshiba America Electronic Components |
OEM/CM Immediate delivery |
4985 |
| Part Number | Description | Stock |
|
TPN1110ENHL1Q Toshiba America Electronic Components |
OEM/CM ONLY |
5095 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q Toshiba America Electronic Components |
IN stock Immediate delivery |
5000 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q Toshiba America Electronic Components |
MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV pbFree: Pb-Free
|
Americas - 0 |
|
TPN1110ENHL1Q Toshiba America Electronic Components |
MOSFET TRANS POWER MOSFET pbFree: Pb-Free
|
Americas - 0 |
| Part Number | Description | Stock |
|
TPN1110ENH,L1Q(M D# 46665001 Toshiba America Electronic Components |
Trans MOSFET N-CH Si 200V 13A 8-Pin TSON EP Advance T/R RoHS: Compliant
|
Americas - 5000 |
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Quick Inquiry
| In Stock | 312 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
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