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| Part Number | TSM4ND65CI |
| OEMstron Part # | TSM4ND65CI |
| Manufacturer | Taiwan Semiconductor Corporation |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | 650V 4A SINGLE N-CHANNEL POWER M |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TSM4ND65CI PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 1 - Dec 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TSM4ND65CI Specifications
| Part Number | TSM4ND65CI | |
| Brand | Taiwan Semiconductor Corporation | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.2A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 596pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 41.6W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | ITO-220 | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
TSM4ND65CI Documents
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