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TSM60NB099PW C1G

TSM60NB099PW C1G
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For Reference Only

Part Number TSM60NB099PW C1G
OEMstron Part # TSM60NB099PW-C1G
Manufacturer Taiwan Semiconductor Corporation
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHANNEL 600V 38A TO247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM60NB099PW C1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TSM60NB099PW C1G Specifications

Part Number TSM60NB099PW C1G
Brand Taiwan Semiconductor Corporation
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Taiwan Semiconductor Corporation
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TSM60NB099PW C1G Documents

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