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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 848/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 25A WAFER |
In Stock442 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 25A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 25A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 35A WAFER |
In Stock349 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 35A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 35A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 50A WAFER |
In Stock189 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 50A WAFER |
In Stock133 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE SILICON 300V 10A WAFER |
In Stock234 More on Order |
|
Series: - |
Diode Type: Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): 300V |
Current - Average Rectified (Io): 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A |
Speed: No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): 0ns |
Current - Reverse Leakage @ Vr: 200µA @ 300V |
Capacitance @ Vr, F: 600pF @ 1V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 100A WAFER |
In Stock352 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 175°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 35A WAFER |
In Stock318 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 35A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 35A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 35A WAFER |
In Stock315 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 35A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 35A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 50A WAFER |
In Stock360 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 75A WAFER |
In Stock183 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 50A WAFER |
In Stock244 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 150A WAFER |
In Stock169 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 150A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 175°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 50A WAFER |
In Stock465 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 50A WAFER |
In Stock461 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 75A WAFER |
In Stock364 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 50A WAFER |
In Stock396 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 50A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 100A WAFER |
In Stock267 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 75A WAFER |
In Stock380 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 200A WAFER |
In Stock203 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 200A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 175°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 100A WAFER |
In Stock124 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 75A WAFER |
In Stock150 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 75A WAFER |
In Stock387 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 75A WAFER |
In Stock340 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 150A WAFER |
In Stock365 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 150A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 600V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 100A WAFER |
In Stock499 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 100A WAFER |
In Stock259 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -40°C ~ 175°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.7KV 150A WAFER |
In Stock480 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1700V |
Current - Average Rectified (Io): 150A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1700V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 100A WAFER |
In Stock318 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 100A WAFER |
In Stock127 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1.2KV 150A WAFER |
In Stock208 More on Order |
|
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io): 150A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 27µA @ 1200V |
Capacitance @ Vr, F: - |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Sawn on foil |
Operating Temperature - Junction: -55°C ~ 150°C |