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Transistors

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NESG2030M04-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.3V 60GHZ M04

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.3V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
In Stock205

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NESG2030M04-T2-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.3V 60GHZ M04

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.3V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
In Stock174

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NESG2046M33-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 18GHZ 3SMINMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 11.5dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
In Stock474

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NESG2046M33-T3-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 18GHZ 3SMINMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 11.5dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
In Stock163

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NESG2101M05-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 17GHZ M05

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain: 11dB ~ 19dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M05
In Stock158

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NESG2107M33-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 10GHZ 3SMINMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
  • Gain: 7dB ~ 10dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
In Stock467

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NESG2107M33-T3-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 10GHZ 3SMINMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
  • Gain: 7dB ~ 10dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
In Stock118

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NESG250134-T1-AZ

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.2V 10GHZ 3MIIMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Frequency - Transition: 10GHz
  • Gain: 23dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
In Stock323

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NESG260234-T1-AZ

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.2V 3POWERMINIMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Power - Max: 1.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
In Stock139

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NESG270034-T1-AZ

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.2V 3POWERMINIMOLD

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Power - Max: 1.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
In Stock128

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NESG7030M04-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.3V 5.8GHZ M04

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.3V
  • Frequency - Transition: 5.8GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
  • Gain: 14dB ~ 21dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
In Stock110

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NSVF2250WT1
NSVF2250WT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V SC70-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
In Stock216

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NSVF2250WT1G
NSVF2250WT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V SC70-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
In Stock117

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NSVF3007SG3T1G
NSVF3007SG3T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ 3MCPH

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: 3-MCPH
In Stock211

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NSVF4009SG4T1G
NSVF4009SG4T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 25GHZ SC82FL/

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
  • Gain: 17dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: SC-82FL/MCPH4
In Stock204

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NSVF4015SG4T1G
NSVF4015SG4T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ SC82FL/

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: SC-82FL/MCPH4
In Stock4,072

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NSVF4017SG4T1G
NSVF4017SG4T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ SC82FL/

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: SC-82FL/MCPH4
In Stock324

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NSVF4020SG4T1G
NSVF4020SG4T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ SC82FL/MCP

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: SC-82FL/MCPH4
In Stock460

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NSVF5488SKT3G
NSVF5488SKT3G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

BIP NPN 70MA 10V FT=7G

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623/SSFP
In Stock425

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NSVF5490SKT3G
NSVF5490SKT3G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF-TR 10V 30MA FT=8G NPN

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
  • Gain: 10dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623/SSFP
In Stock328

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NSVF5501SKT3G
NSVF5501SKT3G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF-TR 10V 70MA FT=5.5GHZ

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623/SSFP
In Stock359

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NSVF6003SB6T1G
NSVF6003SB6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ 6CPH

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 3dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
In Stock466

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NSVMMBTH10LT1G
NSVMMBTH10LT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock4,120

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ON5087,115

Transistors - Bipolar (BJT) - RF

RF TRANSPONDER SOT343F

  • Manufacturer: NXP USA Inc.
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
In Stock4,937

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ON5088,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 55GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 12GHz
  • Gain: 13dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock159

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ON5089,115

Transistors - Bipolar (BJT) - RF

RF TRANSPONDER SOT343F

  • Manufacturer: NXP USA Inc.
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
In Stock4,575

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PBR941,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 8GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock19,606

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PBR941B,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock119

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PBR951,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 8GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
  • Power - Max: 365mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock488

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PH1090-175L
PH1090-175L

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 80V

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Gain: 8.58dB
  • Power - Max: 188W
  • Current - Collector (Ic) (Max): 10.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock397

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