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Transistors

Records 64,903
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Part Number
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In Stock
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2N5880
2N5880

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock442

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2N5881
2N5881

Microsemi

Transistors - Bipolar (BJT) - Single

NPN POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Power - Max: 160W
In Stock485

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2N5882
2N5882

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock401

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2N5883
2N5883

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock500

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2N5883G
2N5883G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 25A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock715

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2N5884
2N5884

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 25A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock171

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2N5884
2N5884

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock103

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2N5884
2N5884

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 25A TO-3

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock444

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2N5884G
2N5884G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 25A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock418

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2N5885
2N5885

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock358

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2N5885
2N5885

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 25A TO-3

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock328

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2N5885G
2N5885G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 25A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock612

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2N5886
2N5886

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock351

More on Order

2N5886G
2N5886G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 25A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock849

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2N5954
2N5954

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock255

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2N5956
2N5956

Microsemi

Transistors - Bipolar (BJT) - Single

PNP POWER TRANSISTOR SILICON AMP

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock340

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2N5961
2N5961

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock137

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2N5961_D27Z
2N5961_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock172

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2N5962
2N5962

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock475

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2N5962
2N5962

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock242

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2N5962_D26Z
2N5962_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock463

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2N5962_D74Z
2N5962_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock486

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2N5963
2N5963

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 10mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock196

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2N6034
2N6034

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 40V 4A TO225AA

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
In Stock195

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2N6034G
2N6034G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 40V 4A TO225AA

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
In Stock5,468

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2N6035G
2N6035G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 60V 4A TO-225AA

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
In Stock653

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2N6036
2N6036

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 80V 4A TO225AA

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
In Stock383

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2N6036
2N6036

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 80V 4A SOT-32

  • Manufacturer: STMicroelectronics
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32
In Stock2,492

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2N6036-AP
2N6036-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANS PNP BIPOLAR TO-126

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
In Stock382

More on Order

2N6036G
2N6036G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 80V 4A TO225AA

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
In Stock448

More on Order