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Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
2N6316
2N6316

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock106

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2N6317
2N6317

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 7A TO-213AA

  • Manufacturer: Microsemi Corporation
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
  • Power - Max: 90W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
In Stock269

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2N6329
2N6329

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock114

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2N6330
2N6330

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock500

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2N6338
2N6338

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 100V 25A TO-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock489

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2N6338
2N6338

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock188

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2N6338G
2N6338G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 100V 25A TO-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock354

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2N6339
2N6339

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock456

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2N6340
2N6340

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock352

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2N6341
2N6341

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 25A TO-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock467

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2N6341G
2N6341G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 25A TO-3

  • Manufacturer: ON Semiconductor
  • Series: *
In Stock244

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2N6350
2N6350

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock361

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2N6352
2N6352

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock452

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2N6353
2N6353

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock308

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2N6377
2N6377

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock201

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2N6383
2N6383

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock170

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2N6384
2N6384

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock373

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2N6384
2N6384

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 60V 10A TO-3

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 100W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock818

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2N6387
2N6387

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 60V 10A TO220AB

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock471

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2N6387G
2N6387G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 60V 10A TO220AB

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock413

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2N6388
2N6388

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 80V 10A TO220AB

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock496

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2N6388
2N6388

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 80V 10A TO-220

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 65W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock169

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2N6388
2N6388

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 80V 10A TO220

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Power - Max: 65W
  • Frequency - Transition: 20MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
In Stock142

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2N6388G
2N6388G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 80V 10A TO220AB

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock5,106

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2N6426
2N6426

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock236

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2N6426
2N6426

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock306

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2N6426_D26Z
2N6426_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock181

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2N6426_D74Z
2N6426_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock322

More on Order

2N6426G
2N6426G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock225

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2N6426RLRA
2N6426RLRA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.5A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock392

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