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Transistors

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2PD602AR,115

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SC-59

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock425

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2PD602ARL,215
2PD602ARL,215

Nexperia

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SOT-23

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock367

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2PD602ARL,235
2PD602ARL,235

Nexperia

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SOT-23

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock100

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2PD602AS,115

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SC-59

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock493

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2PD602ASL,215
2PD602ASL,215

Nexperia

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SOT-23

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock41,987

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2PD602ASL,235
2PD602ASL,235

Nexperia

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.5A SOT-23

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock313

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2SA06830R
2SA06830R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 25V 1A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock168

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2SA06840R
2SA06840R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 1A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock226

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2SA06840S
2SA06840S

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 1A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock418

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2SA07200RA
2SA07200RA

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 0.5A TO-92

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
In Stock363

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2SA0720ARA
2SA0720ARA

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 70V 0.5A TO-92

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
In Stock360

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2SA07770Q
2SA07770Q

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 0.5A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock454

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2SA07770R
2SA07770R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 0.5A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock296

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2SA07940R
2SA07940R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 100V 0.5A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1.2W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock338

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2SA0794AR
2SA0794AR

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 120V 0.5A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1.2W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock187

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2SA08790Q
2SA08790Q

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 200V 0.07A TO-92L

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L-A1
In Stock183

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2SA08850R
2SA08850R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 35V 1A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 5W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock156

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2SA08860Q
2SA08860Q

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 1.5A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock437

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2SA09000R
2SA09000R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 18V 1A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock480

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2SA09140R
2SA09140R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 150V 0.05A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
In Stock292

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2SA0963
2SA0963

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 1.5A TO-126

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 10W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126A-A1
In Stock469

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2SA1012-AP
2SA1012-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANS PNP TO-220AB

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
  • Power - Max: 25W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
In Stock474

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2SA1013-O,T6MIBF(J
2SA1013-O,T6MIBF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 160V TO226-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L
In Stock260

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2SA1013-R-AP
2SA1013-R-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANSISTOR TO-92 MOD

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 15MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92MOD
In Stock235

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2SA1015-O-AP
2SA1015-O-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANSISTOR TO-92 MOD

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 400mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
In Stock314

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2SA10180RA
2SA10180RA

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 200V 0.07A TO-92

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
In Stock225

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2SA1020
2SA1020

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92 (TO-226)
In Stock367

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2SA1020A,NSEIKIF(J
2SA1020A,NSEIKIF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 2A 50V TO226-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
In Stock383

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2SA1020A,T6CSF(J
2SA1020A,T6CSF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 2A 50V TO226-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
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2SA1020G
2SA1020G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92 (TO-226)
In Stock182

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