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Page 2/2164

Part Number	Description	In Stock
2N2918 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock249 More on Order
2N2919 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock328 More on Order
2N2919 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock313 More on Order
2N2919A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock434 More on Order
2N2919L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock129 More on Order
2N2919U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock116 More on Order
2N2920 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock250 More on Order
2N2920 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock106 More on Order
2N2920A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock440 More on Order
2N2920L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock331 More on Order
2N2920U Microsemi	Transistors - Bipolar (BJT) - Arrays PNP TRANSISTOR Manufacturer: Microsemi Corporation Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	In Stock200 More on Order
2N3726 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock324 More on Order
2N3727 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock335 More on Order
2N3806 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock446 More on Order
2N3807 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock231 More on Order
2N3808 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock491 More on Order
2N3809 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock396 More on Order
2N3810 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock222 More on Order
2N3810 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock766 More on Order
2N3810A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock237 More on Order
2N3810L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock348 More on Order
2N3810U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock284 More on Order
2N3811 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock249 More on Order
2N3811 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock273 More on Order
2N3811A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock209 More on Order
2N3811L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock460 More on Order
2N3811U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock354 More on Order
2N3838 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 40V 0.6A 6 PFLTPK Manufacturer: Microsemi Corporation Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-FlatPack Supplier Device Package: 6-Flatpack	In Stock458 More on Order
2N4015 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock428 More on Order
2N4016 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock101 More on Order

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