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Transistors

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VS-GT100LA120UX
VS-GT100LA120UX

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 134A 463W SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock128

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VS-GT100NA120UX
VS-GT100NA120UX

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 134A 463W SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock309

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VS-GT100TP120N
VS-GT100TP120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 180A 652W INT-A-PAK

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 652W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 12.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
In Stock290

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VS-GT100TP60N
VS-GT100TP60N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 600V 160A 417W INT-A-PAK

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 417W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 7.71nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
In Stock146

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VS-GT105LA120UX
VS-GT105LA120UX

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 105A LS CHOP SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Current - Collector Cutoff (Max): 75µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock145

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VS-GT105NA120UX
VS-GT105NA120UX

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 105A HS CHOP SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Current - Collector Cutoff (Max): 75µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock390

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VS-GT120DA65U
VS-GT120DA65U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

OUTPUT & SW MODULES - SOT-227 IG

  • Manufacturer: Vishay Semiconductor Diodes Division
  • Series: FRED Pt®
  • IGBT Type: Trench
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 167A
  • Power - Max: 577W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock100

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VS-GT140DA60U
VS-GT140DA60U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 600V 200A 652W SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 652W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock113

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VS-GT175DA120U
VS-GT175DA120U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 288A 1087W SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 288A
  • Power - Max: 1087W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock121

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VS-GT180DA120U
VS-GT180DA120U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V SOT-227

  • Manufacturer: Vishay Semiconductor Diodes Division
  • Series: HEXFRED®
  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 281A
  • Power - Max: 1087W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9350pF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock437

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VS-GT200TP065N
VS-GT200TP065N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 221A
  • Power - Max: 600W
  • Vce(on) (Max) @ Vge, Ic: 2.12V @ 15V, 200A
  • Current - Collector Cutoff (Max): 60µA
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
In Stock206

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VS-GT300FD060N
VS-GT300FD060N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 600V 379A 1250W DIAP

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 379A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 23.3nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (4 + 8)
  • Supplier Device Package: Dual INT-A-PAK
In Stock239

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VS-GT300YH120N
VS-GT300YH120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 341A 1042W DIAP

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 341A
  • Power - Max: 1042W
  • Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 300µA
  • Input Capacitance (Cies) @ Vce: 36nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
In Stock425

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VS-GT400TH120N
VS-GT400TH120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 600A 2119W DIAP

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
In Stock322

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VS-GT400TH120U
VS-GT400TH120U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 750A 2344W DIAP

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 2344W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
In Stock385

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VS-GT400TH60N
VS-GT400TH60N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 600V 530A 1600W DIAP

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1600W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 30.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
In Stock279

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VS-GT50TP120N
VS-GT50TP120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 100A 405W INT-A-PAK

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 405W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 6.24nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
In Stock323

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VS-GT50TP60N
VS-GT50TP60N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 600V 85A 208W INT-A-PAK

  • Manufacturer: Vishay Semiconductor Diodes Division
  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3.03nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
In Stock439

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VS-GT75LP120N
VS-GT75LP120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 150A 543W

  • Manufacturer: Vishay Semiconductor Diodes Division
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
In Stock325

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VS-GT75NP120N
VS-GT75NP120N

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

IGBT 1200V 150A 446W INT-A-PAK

  • Manufacturer: Vishay Semiconductor Diodes Division
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 446W
  • Vce(on) (Max) @ Vge, Ic: 2.08V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 9.45nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
In Stock453

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VS-GT80DA120U
VS-GT80DA120U

Vishay Semiconductor Diodes Division

Transistors - IGBTs - Modules

OUTPUT & SW MODULES - SOT-227 IG

  • Manufacturer: Vishay Semiconductor Diodes Division
  • Series: HEXFRED®
  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 139A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
In Stock517

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VWI15-12P1
VWI15-12P1

IXYS

Transistors - IGBTs - Modules

MODULE IGBT 18A 1200V ECO-PAC2

  • Manufacturer: IXYS
  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 18A
  • Power - Max: 90W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
In Stock116

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VWI20-06P1
VWI20-06P1

IXYS

Transistors - IGBTs - Modules

MODULE IGBT 19A 600V ECO-PAC2

  • Manufacturer: IXYS
  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Power - Max: 73W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
In Stock248

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VWI35-06P1
VWI35-06P1

IXYS

Transistors - IGBTs - Modules

MODULE IGBT 31A 600V ECO-PAC2

  • Manufacturer: IXYS
  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Power - Max: 100W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
In Stock458

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VWI3X20-06P1

Transistors - IGBTs - Modules

MODULE IGBT 3X20A 600V ECO-PAC1

  • Manufacturer: IXYS
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Input: Standard
  • NTC Thermistor: No
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
In Stock435

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VWI6-12P1
VWI6-12P1

IXYS

Transistors - IGBTs - Modules

MODULE IGBT 6PACK 1200V ECO-PAC2

  • Manufacturer: IXYS
  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6A
  • Power - Max: 40W
  • Vce(on) (Max) @ Vge, Ic: 4.6V @ 15V, 4A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 0.205nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
In Stock373

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63-7000PBF
63-7000PBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V COPAK

  • Manufacturer: Infineon Technologies
  • Series: *
In Stock394

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92-0065
92-0065

Infineon Technologies

Transistors - IGBTs - Single

IGBT STD 600V 60A TO-220AB

  • Manufacturer: Infineon Technologies
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
  • Power - Max: 160W
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock355

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92-0235
92-0235

Infineon Technologies

Transistors - IGBTs - Single

IGBT 430V 20A 125W TO220AB

  • Manufacturer: Infineon Technologies
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
  • Power - Max: 125W
  • Input Type: Logic
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 900ns/6µs
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
In Stock245

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AFGB30T65SQDN
AFGB30T65SQDN

ON Semiconductor

Transistors - IGBTs - Single

650V/30A FS4 IGBT TO263 A

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, EcoSPARK®
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 220W
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 14.5ns/63.2ns
  • Test Condition: 400V, 30A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 245ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D²PAK-3 (TO-263-3)
In Stock194

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