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Part Number	Description	In Stock
APT30GP60LDLG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 463W TO264 Manufacturer: Microsemi Corporation IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock253 More on Order
APT30GS60BRDLG Microsemi	Transistors - IGBTs - Single IGBT 600V 54A 250W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 113A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: 250W Switching Energy: 570µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/360ns Test Condition: 400V, 30A, 9.1Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock200 More on Order
APT30GS60BRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 54A 250W SOT227 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 113A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: 250W Switching Energy: 570µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/360ns Test Condition: 400V, 30A, 9.1Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock467 More on Order
APT30GS60KRG Microsemi	Transistors - IGBTs - Single IGBT 600V 54A 250W TO220 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 113A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: 250W Switching Energy: 570µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/360ns Test Condition: 400V, 30A, 9.1Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock438 More on Order
APT30GT60BRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 64A 250W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 80µJ (on), 605µJ (off) Input Type: Standard Gate Charge: 7.5nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock554 More on Order
APT30GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 64A 250W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 525µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock369 More on Order
APT30GT60KRG Microsemi	Transistors - IGBTs - Single IGBT 600V 64A 250W TO220 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 525µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock247 More on Order
APT33GF120B2RDQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 64A 357W TMAX Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Power - Max: 357W Switching Energy: 1.315mJ (on), 1.515mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 14ns/185ns Test Condition: 800V, 25A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant	In Stock238 More on Order
APT33GF120BRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 52A 297W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 297W Switching Energy: 2.8mJ (on), 2.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 25ns/210ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock373 More on Order
APT33GF120LRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 64A 357W TO264 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Power - Max: 357W Switching Energy: 1.315mJ (on), 1.515mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 14ns/185ns Test Condition: 800V, 25A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock318 More on Order
APT35GA90B Microsemi	Transistors - IGBTs - Single IGBT 900V 63A 290W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A Power - Max: 290W Switching Energy: 642µJ (on), 382µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 12ns/104ns Test Condition: 600V, 18A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock464 More on Order
APT35GA90BD15 Microsemi	Transistors - IGBTs - Single IGBT 900V 63A 290W TO247 Manufacturer: Microsemi Corporation IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A Power - Max: 290W Switching Energy: 642µJ (on), 382µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 12ns/104ns Test Condition: 600V, 18A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock501 More on Order
APT35GN120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 94A 379W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 94A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Power - Max: 379W Switching Energy: 2.315mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 24ns/300ns Test Condition: 800V, 35A, 2.2Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock252 More on Order
APT35GN120L2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 94A 379W TO264 Manufacturer: Microsemi Corporation IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 94A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Power - Max: 379W Switching Energy: 2.315mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 24ns/300ns Test Condition: 800V, 35A, 2.2Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA	In Stock488 More on Order
APT35GP120B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 96A 543W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A Power - Max: 543W Switching Energy: 750µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 16ns/95ns Test Condition: 600V, 35A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant	In Stock262 More on Order
APT35GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 96A 543W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A Power - Max: 543W Switching Energy: 750µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 16ns/94ns Test Condition: 600V, 35A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock428 More on Order
APT36GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 65A 290W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 109A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 290W Switching Energy: 307µJ (on), 254µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 400V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock442 More on Order
APT36GA60BD15 Microsemi	Transistors - IGBTs - Single IGBT 600V 65A 290W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 109A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 290W Switching Energy: 307µJ (on), 254µJ (off) Input Type: Standard Gate Charge: 18nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 400V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock477 More on Order
APT40GP60B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 543W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant	In Stock345 More on Order
APT40GP60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 543W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 352µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock156 More on Order
APT40GP60SG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 543W D3PAK Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 352µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3 [S]	In Stock144 More on Order
APT40GP90B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 900V 101A 543W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 101A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Power - Max: 543W Switching Energy: 795µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 14ns/90ns Test Condition: 600V, 40A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant	In Stock400 More on Order
APT40GP90BG Microsemi	Transistors - IGBTs - Single IGBT 900V 100A 543W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Power - Max: 543W Switching Energy: 825µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/75ns Test Condition: 600V, 40A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock349 More on Order
APT40GR120B Microsemi	Transistors - IGBTs - Single IGBT 1200V 88A 500W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 500W Switching Energy: 1.38mJ (on), 906µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 22ns/163ns Test Condition: 600V, 40A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock471 More on Order
APT40GR120B2D30 Microsemi	Transistors - IGBTs - Single IGBT 1200V 88A 500W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 500W Switching Energy: 1.38mJ (on), 906µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 22ns/163ns Test Condition: 600V, 40A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock410 More on Order
APT40GR120B2SCD10 Microsemi	Transistors - IGBTs - Single IGBT 1200V 88A 500W TO247 Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 500W Switching Energy: 929µJ (on), 1070µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 20ns/166ns Test Condition: 600V, 40A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock196 More on Order
APT40GR120S Microsemi	Transistors - IGBTs - Single IGBT 1200V 88A 500W D3PAK Manufacturer: Microsemi Corporation IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 500W Switching Energy: 1.38mJ (on), 906µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 22ns/163ns Test Condition: 600V, 40A, 4.3Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D3Pak	In Stock480 More on Order
APT40GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 80A 345W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 345W Switching Energy: 828µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 12ns/124ns Test Condition: 400V, 40A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock1,097 More on Order
APT43GA90B Microsemi	Transistors - IGBTs - Single IGBT 900V 78A 337W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 129A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A Power - Max: 337W Switching Energy: 875µJ (on), 425µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 12ns/82ns Test Condition: 600V, 25A, 4.7Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock328 More on Order
APT43GA90BD30 Microsemi	Transistors - IGBTs - Single IGBT 900V 78A 337W TO247 Manufacturer: Microsemi Corporation IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 129A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Power - Max: 337W Switching Energy: 875µJ (on), 425µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 12ns/82ns Test Condition: 600V, 25A, 4.7Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock516 More on Order

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