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Part Number	Description	In Stock
IRG4BC20U-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 60W TO220-3 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 60W Switching Energy: 100µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 21ns/86ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock345 More on Order
IRG4BC20W Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 60W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock456 More on Order
IRG4BC20WPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 60W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock442 More on Order
IRG4BC20W-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 60W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock121 More on Order
IRG4BC20W-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 60W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 60W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock281 More on Order
IRG4BC30F Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock307 More on Order
IRG4BC30FD1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 370µJ (on), 1.42mJ (off) Input Type: Standard Gate Charge: 57nC Td (on/off) @ 25°C: 22ns/250ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 46ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock500 More on Order
IRG4BC30FD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 370µJ (on), 1.42mJ (off) Input Type: Standard Gate Charge: 57nC Td (on/off) @ 25°C: 22ns/250ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 46ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock157 More on Order
IRG4BC30FDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock1,619 More on Order
IRG4BC30FD-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock215 More on Order
IRG4BC30FD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,443 More on Order
IRG4BC30FD-STRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock250 More on Order
IRG4BC30FDSTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock198 More on Order
IRG4BC30FPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock429 More on Order
IRG4BC30F-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock128 More on Order
IRG4BC30F-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock376 More on Order
IRG4BC30F-STRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock386 More on Order
IRG4BC30F-STRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock395 More on Order
IRG4BC30F-STRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock499 More on Order
IRG4BC30F-STRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock227 More on Order
IRG4BC30K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock290 More on Order
IRG4BC30KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock301 More on Order
IRG4BC30KD-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock2,909 More on Order
IRG4BC30KDSTRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock2,376 More on Order
IRG4BC30KD-STRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock253 More on Order
IRG4BC30KDSTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock196 More on Order
IRG4BC30KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W TO220AB Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock201 More on Order
IRG4BC30K-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock101 More on Order
IRG4BC30K-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock446 More on Order
IRG4BC30K-STRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock490 More on Order

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