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Bipolar (BJT) - Arrays (1,432)
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Page 22/2164

Part Number	Description	In Stock
JANTXV2N2920L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock309 More on Order
JANTXV2N2920U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/355 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	In Stock228 More on Order
JANTXV2N3810 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock449 More on Order
JANTXV2N3810L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock462 More on Order
JANTXV2N3810U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock230 More on Order
JANTXV2N3811 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock163 More on Order
JANTXV2N3811L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock342 More on Order
JANTXV2N3811U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/336 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock405 More on Order
JANTXV2N5794 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 40V 0.6A TO-78 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/495 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock305 More on Order
JANTXV2N6987 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4PNP 60V 0.6A TO116 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/558 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm)	In Stock134 More on Order
JANTXV2N6988 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4PNP 60V 0.6A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/558 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	In Stock170 More on Order
JANTXV2N6989 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A TO116 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/559 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	In Stock488 More on Order
JANTXV2N6990 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A 14PIN Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/559 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	In Stock492 More on Order
L603C STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 90V 0.4A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA Power - Max: 1.8W Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 18-DIP	In Stock299 More on Order
L604C STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 90V 0.4A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA Power - Max: 1.8W Operating Temperature: -25°C ~ 150°C (TJ)	In Stock408 More on Order
L6221AD STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN DARL 50V 1.8A 20SOIC Manufacturer: STMicroelectronics Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A Power - Max: 1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	In Stock319 More on Order
L6221AD013TR STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN DARL 50V 1.8A 20SOIC Manufacturer: STMicroelectronics Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A Power - Max: 1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	In Stock108 More on Order
L6221AS STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN DARL 50V 1.8A 16DIP Manufacturer: STMicroelectronics Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A Power - Max: 1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 16-PowerDIP	In Stock354 More on Order
L6221CD STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN DARL 60V 1.2A 20SOIC Manufacturer: STMicroelectronics Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 60V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	In Stock326 More on Order
L6221CD013TR STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN DARL 60V 1.2A 20SOIC Manufacturer: STMicroelectronics Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 60V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	In Stock334 More on Order
LBN150B01-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 40V 0.2A SOT26 Manufacturer: Diodes Incorporated Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock244 More on Order
LBN150B02-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays MOSFET ARRAY SMD Manufacturer: Diodes Incorporated Series: *	In Stock315 More on Order
LM394CH/NOPB Texas Instruments	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.02A TO99-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Power - Max: 500mW Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-99-6 Metal Can Supplier Device Package: TO-99-6	In Stock251 More on Order
MAT01AH Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 45V 0.025A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 300nA Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock329 More on Order
MAT01AHZ Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 45V 0.025A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 300nA Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock510 More on Order
MAT01GH Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 45V 0.025A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock328 More on Order
MAT01GHZ Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 45V 0.025A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock2,136 More on Order
MAT03EH Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 36V 0.02A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Power - Max: 500mW Frequency - Transition: 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock405 More on Order
MAT03EHZ Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 36V 0.02A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Power - Max: 500mW Frequency - Transition: 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock417 More on Order
MAT03FH Analog Devices	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 36V 0.02A TO78-6 Manufacturer: Analog Devices Inc. Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Power - Max: 500mW Frequency - Transition: 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock153 More on Order

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