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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
2SC59540Q Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A TO-220D Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 20mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock204 More on Order
2SC5964-S-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 3A Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.3W Frequency - Transition: 380MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock243 More on Order
2SC5964-S-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 3A Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.3W Frequency - Transition: 380MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock380 More on Order
2SC5964-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 3A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 3.5W Frequency - Transition: 380MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock8,067 More on Order
2SC5964-TD-H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 3A Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 3.5W Frequency - Transition: 380MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock2,427 More on Order
2SC59930P Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 180V 1.5A TO-220D Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock373 More on Order
2SC59930Q Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 180V 1.5A TO-220D Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock327 More on Order
2SC5994-TD-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A SOT89-3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.3W Frequency - Transition: 420MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	In Stock3,407 More on Order
2SC6010(T2MITUM,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 600V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock116 More on Order
2SC6011 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 15A TO3P Manufacturer: Sanken Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 160W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock2,315 More on Order
2SC6011A Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 230V 15A TO3P Manufacturer: Sanken Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 160W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock1,813 More on Order
2SC6017-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 10A TP Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 950mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP	In Stock2,348 More on Order
2SC6017-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 10A TP-FA Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 950mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	In Stock15,205 More on Order
2SC6017-TL-EX ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 10A Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 950mW Frequency - Transition: 200MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	In Stock412 More on Order
2SC6026CTGRTPL3 Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A CST3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock213 More on Order
2SC6026CT-Y(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A CST3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock355 More on Order
2SC6026MFVGR,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A VESM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock24,049 More on Order
2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.15A H Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock313 More on Order
2SC603600L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 12V 0.5A SSSMINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	In Stock407 More on Order
2SC6036G0L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 12V 0.5A SSSMINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2	In Stock16,838 More on Order
2SC6037J0L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 12V 0.5A SSMINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 125mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock9,226 More on Order
2SC6040,T2Q(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 800V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock409 More on Order
2SC6040(TPF2,Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 800V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock358 More on Order
2SC6042,T2HOSH1Q(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 375V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock363 More on Order
2SC6042,T2WNLQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 375V SC71 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	In Stock435 More on Order
2SC6043 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A MP Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 420MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	In Stock227 More on Order
2SC6043-AE ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A MP Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 420MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: 3-MP	In Stock201 More on Order
2SC6054G0L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A SSMINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	In Stock136 More on Order
2SC6054J0L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A SSMINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock4,334 More on Order
2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 3A PW MOLD Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	In Stock218 More on Order

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