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Transistors

Records 64,903
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Part Number
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STA322A
STA322A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 3PNP 50V 3A 8STA

  • Manufacturer: Sanken
  • Transistor Type: 3 PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 40mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
  • Power - Max: 3W, 15W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-SIP
  • Supplier Device Package: 8-SIP
In Stock308

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STA401A
STA401A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 4A 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock4,217

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STA402A
STA402A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP DARL 50V 4A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 PNP Darlington (Quad)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock5,153

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STA403A
STA403A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 100V 4A SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 100V @ 10mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock4,016

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STA404A
STA404A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 200V 3A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.5mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock3,760

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STA406A
STA406A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 6A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock4,899

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STA408A
STA408A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP DARL 120V 4A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 PNP Darlington (Quad)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock1,244

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STA412A
STA412A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 60V 3A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock3,454

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STA413A
STA413A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 35V 3A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock1,176

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STA421A
STA421A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP 60V 3A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock323

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STA431A
STA431A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN/2PNP 60V 3A 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 2 NPN, 2 PNP (H-Bridge)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock334

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STA434A
STA434A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN/2PNP DARL 60V 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock2,700

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STA457C
STA457C

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN/2PNP DARL 60V 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock440

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STA460C
STA460C

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN DARL 60V 6A

  • Manufacturer: Sanken
  • Transistor Type: 2 NPN Darlington (Dual)
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 15mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 700 @ 1A, 1V
  • Power - Max: 3.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock385

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STA471A
STA471A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 2A 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock2,268

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STA472A
STA472A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4PNP DARL 60V 2A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 PNP Darlington (Quad)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock344

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STA473A
STA473A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 100V 2A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock359

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STA475A
STA475A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 100V 2A 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock646

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STA481A
STA481A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 60V 1A 10SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock533

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STA485A
STA485A

Sanken

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 100V 1A 10-SIP

  • Manufacturer: Sanken
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
In Stock545

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STD815CP40
STD815CP40

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 400V 1.5A 8DIP

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
  • Power - Max: 2.6W
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
In Stock990

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STD830CP40
STD830CP40

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 400V 3A 8DIP

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
In Stock487

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STD840DN40
STD840DN40

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 400V 4A 8DIP

  • Manufacturer: STMicroelectronics
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
In Stock258

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STD845DN40
STD845DN40

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 400V 4A 8DIP

  • Manufacturer: STMicroelectronics
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
In Stock202

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STS01DTP06
STS01DTP06

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 30V 3A 8SO

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock324

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STS05DTP03
STS05DTP03

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 30V 5A 8SO

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 250mA, 5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock454

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TPC6901(TE85L,F,M)
TPC6901(TE85L,F,M)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V 6VS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
  • Power - Max: 400mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: VS-6 (2.9x2.8)
In Stock225

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TPCP8701(TE85L,F,M
TPCP8701(TE85L,F,M

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

X35 PB-F POWER MOSFET TRANSISTOR

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
  • Power - Max: 1.77W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8
In Stock238

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TPCP8901(TE85L,F,M
TPCP8901(TE85L,F,M

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

X35 PB-F POWER MOSFET TRANSISTOR

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A, 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
  • Power - Max: 1.48W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8
In Stock263

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ULN2001A
ULN2001A

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16DIP

  • Manufacturer: STMicroelectronics
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
In Stock16,626

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