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Bipolar (BJT) - Arrays (1,432)
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Page 441/2164

Part Number	Description	In Stock
JANTXV2N3634L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock321 More on Order
JANTXV2N3635 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-39 Supplier Device Package: TO-39 (TO-205AD)	In Stock481 More on Order
JANTXV2N3635L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock287 More on Order
JANTXV2N3635UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock229 More on Order
JANTXV2N3636 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-39 Supplier Device Package: TO-39 (TO-205AD)	In Stock144 More on Order
JANTXV2N3636L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock247 More on Order
JANTXV2N3636UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock172 More on Order
JANTXV2N3637 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock390 More on Order
JANTXV2N3637L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock461 More on Order
JANTXV2N3637UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/357 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock151 More on Order
JANTXV2N3700 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/391 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock310 More on Order
JANTXV2N3700UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A UB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/391 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (2.9x2.2)	In Stock286 More on Order
JANTXV2N3715 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/408 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Power - Max: 5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock198 More on Order
JANTXV2N3716 M/A-Com Technology Solutions	Transistors - Bipolar (BJT) - Single DIODE Manufacturer: M/A-Com Technology Solutions Series: Military, MIL-PRF-19500/408 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Power - Max: 5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock440 More on Order
JANTXV2N3735 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/395 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock138 More on Order
JANTXV2N3735L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/395 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock214 More on Order
JANTXV2N3737 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO46 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/395 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock395 More on Order
JANTXV2N3737UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A UB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/395 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead	In Stock319 More on Order
JANTXV2N3739 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 1A TO-66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/402 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V Power - Max: 20W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock246 More on Order
JANTXV2N3740 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 4A TO-66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/441 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 25W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock155 More on Order
JANTXV2N3741 M/A-Com Technology Solutions	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 4A TO-66 Manufacturer: M/A-Com Technology Solutions Series: Military, MIL-PRF-19500/441 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 3W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock479 More on Order
JANTXV2N3741 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 4A TO-66 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/441 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 25W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	In Stock388 More on Order
JANTXV2N3749 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 5A TO111 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/315 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: 2W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Supplier Device Package: TO-111	In Stock246 More on Order
JANTXV2N3763 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 1.5A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/396 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 1W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock166 More on Order
JANTXV2N3764 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 40V 1.5A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/396 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V Power - Max: 500mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46	In Stock262 More on Order
JANTXV2N3766 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 4A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/518 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Power - Max: 25W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock121 More on Order
JANTXV2N3767 M/A-Com Technology Solutions	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 4A TO-66 Manufacturer: M/A-Com Technology Solutions Series: Military, MIL-PRF-19500/518 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Power - Max: 25W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock169 More on Order
JANTXV2N3767 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 4A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/518 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Power - Max: 25W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock441 More on Order
JANTXV2N3791 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 10A TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/379 Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Power - Max: 5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	In Stock336 More on Order
JANTXV2N3867 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 40V 3A TO5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/350 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock220 More on Order

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