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Bipolar (BJT) - Arrays (1,432)
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Page 517/2164

Part Number	Description	In Stock
MPSA06,412 NXP	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: NXP USA Inc. Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock363 More on Order
MPSA06-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock48,987 More on Order
MPSA06_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock122 More on Order
MPSA06_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock306 More on Order
MPSA06_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock143 More on Order
MPSA06_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock421 More on Order
MPSA06G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock207 More on Order
MPSA06RA ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock487 More on Order
MPSA06RL ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock365 More on Order
MPSA06RL1 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock106 More on Order
MPSA06RL1G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock115 More on Order
MPSA06RLG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock276 More on Order
MPSA06RLRA ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock457 More on Order
MPSA06RLRAG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock295 More on Order
MPSA06RLRMG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock467 More on Order
MPSA06RLRPG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock309 More on Order
MPSA06T93 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 Manufacturer: Rohm Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 350mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock493 More on Order
MPSA10 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5µA, 10V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock214 More on Order
MPSA10_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5µA, 10V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock163 More on Order
MPSA12 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock155 More on Order
MPSA12_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock497 More on Order
MPSA12_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock446 More on Order
MPSA12_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock162 More on Order
MPSA12_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock344 More on Order
MPSA12G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock135 More on Order
MPSA12RLRA ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock490 More on Order
MPSA12RLRAG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock247 More on Order
MPSA12RLRP ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock430 More on Order
MPSA12RLRPG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock114 More on Order
MPSA13-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANS PREBIAS NPN 30V TO92 Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 1.5W Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock224 More on Order

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