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Transistors

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DMG963030R
DMG963030R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock262

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DMG963H10R
DMG963H10R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock344

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DMG963H50R
DMG963H50R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock255

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DMG963HC0R
DMG963HC0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 510Ohms
  • Resistor - Emitter Base (R2): 47kOhms, 5.1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock177

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DMG963HD0R
DMG963HD0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms, 22kOhms
  • Resistor - Emitter Base (R2): 10kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock316

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DMG963HE0R
DMG963HE0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI5

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 30V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 1.2V @ 330µA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
In Stock297

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DMG964010R
DMG964010R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock153

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DMG964020R
DMG964020R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock412

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DMG964030R
DMG964030R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock232

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DMG964040R
DMG964040R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock259

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DMG964050R
DMG964050R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock104

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DMG964060R
DMG964060R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock11,565

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DMG9640M0R
DMG9640M0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock495

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DMG9640N0R
DMG9640N0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock374

More on Order

DMG9640T0R
DMG9640T0R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock139

More on Order

DMG964H10R
DMG964H10R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock372

More on Order

DMG964H30R
DMG964H30R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 1kOhms
  • Resistor - Emitter Base (R2): 47kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock201

More on Order

DMG964H50R
DMG964H50R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms, 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
In Stock176

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EMA11T2R
EMA11T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT5

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock265

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EMA2T2R
EMA2T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT5

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock473

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EMA3T2R
EMA3T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock129

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EMA4T2R
EMA4T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT5

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock364

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EMA5T2R
EMA5T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT5

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock398

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EMA6DXV5T1
EMA6DXV5T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.23W SOT553

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
In Stock426

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EMA6DXV5T1G
EMA6DXV5T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.23W SOT553

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
In Stock119

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EMA6DXV5T5G
EMA6DXV5T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.23W SOT553

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
In Stock137

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EMA8T2R
EMA8T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP EMT5

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
In Stock216

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EMB10T2R
EMB10T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT6

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
In Stock287

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EMB11FHAT2R
EMB11FHAT2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP 100MA EMT6

  • Manufacturer: Rohm Semiconductor
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 PNP Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
In Stock174

More on Order

EMB11T2R
EMB11T2R

Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.15W EMT6

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
In Stock220

More on Order