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Transistors

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MUN5236DW1T1
MUN5236DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • Resistor - Emitter Base (R2): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock219

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MUN5236DW1T1G
MUN5236DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SC88

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • Resistor - Emitter Base (R2): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock462

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MUN5237DW1T1
MUN5237DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock249

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MUN5311DW1T1
MUN5311DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock193

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MUN5311DW1T1G
MUN5311DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock106,953

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MUN5311DW1T2G
MUN5311DW1T2G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock17,059

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MUN5312DW1T1
MUN5312DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock298

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MUN5312DW1T1G
MUN5312DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock54,114

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MUN5312DW1T2G
MUN5312DW1T2G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 385mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock436

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MUN5313DW1T1
MUN5313DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock224

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MUN5313DW1T1G
MUN5313DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock16,626

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MUN5314DW1T1G
MUN5314DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock303,015

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MUN5315DW1T1
MUN5315DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock440

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MUN5315DW1T1G
MUN5315DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock7,959

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MUN5316DW1T1
MUN5316DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock145

More on Order

MUN5316DW1T1G
MUN5316DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock7,237

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MUN5330DW1T1G
MUN5330DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock3,899

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MUN5331DW1T1G
MUN5331DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock145

More on Order

MUN5332DW1T1
MUN5332DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock390

More on Order

MUN5332DW1T1G
MUN5332DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock194

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MUN5333DW1T1
MUN5333DW1T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock127

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MUN5333DW1T1G
MUN5333DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock20,303

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MUN5334DW1T1G
MUN5334DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock500

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MUN5335DW1T1G
MUN5335DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT363

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock253,567

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MUN5335DW1T2G
MUN5335DW1T2G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS 0.25W SC88

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock8,152

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MUN5336DW1T1G
MUN5336DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PMP BRT SC70-6

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • Resistor - Emitter Base (R2): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock24,974

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NP043A200A
NP043A200A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock16,007

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NP043A300A
NP043A300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock118

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NP061A300A
NP061A300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock168

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NP061A500A
NP061A500A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock215

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