Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Transistors

Records 64,903
Page 73/2164
Image
Part Number
Description
In Stock
Quantity
NSBC143EDXV6T1G
NSBC143EDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL NPN SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock161

More on Order

NSBC143EPDP6T5G
NSBC143EPDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN 254MW SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock117

More on Order

NSBC143EPDXV6T1
NSBC143EPDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock311

More on Order

NSBC143EPDXV6T1G
NSBC143EPDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock467

More on Order

NSBC143TDXV6T1
NSBC143TDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock212

More on Order

NSBC143TDXV6T1G
NSBC143TDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL NPN SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock287

More on Order

NSBC143TDXV6T5G
NSBC143TDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL NPN SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock248

More on Order

NSBC143TPDXV6T1
NSBC143TPDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock271

More on Order

NSBC143TPDXV6T1G
NSBC143TPDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock5,144

More on Order

NSBC143TPDXV6T5G
NSBC143TPDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock286

More on Order

NSBC143ZDP6T5G
NSBC143ZDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.339W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock420

More on Order

NSBC143ZDXV6T1
NSBC143ZDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock124

More on Order

NSBC143ZDXV6T1G
NSBC143ZDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock4,760

More on Order

NSBC143ZDXV6T5G
NSBC143ZDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock178

More on Order

NSBC143ZPDP6T5G
NSBC143ZPDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.339W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock413

More on Order

NSBC143ZPDXV6T1G
NSBC143ZPDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock231

More on Order

NSBC143ZPDXV6T5
NSBC143ZPDXV6T5

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock123

More on Order

NSBC143ZPDXV6T5G
NSBC143ZPDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock113

More on Order

NSBC144EDP6T5G
NSBC144EDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.339W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock495

More on Order

NSBC144EDXV6T1G
NSBC144EDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock4,973

More on Order

NSBC144EDXV6T5G
NSBC144EDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock215

More on Order

NSBC144EPDP6T5G
NSBC144EPDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock383

More on Order

NSBC144EPDXV6T1
NSBC144EPDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock331

More on Order

NSBC144EPDXV6T1G
NSBC144EPDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock246

More on Order

NSBC144EPDXV6T5
NSBC144EPDXV6T5

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock286

More on Order

NSBC144EPDXV6T5G
NSBC144EPDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock140

More on Order

NSBC144WDP6T5G
NSBC144WDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.408W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 408mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock315

More on Order

NSBC144WDXV6T1G
NSBC144WDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock235

More on Order

NSBC144WPDP6T5G
NSBC144WPDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN 254MW SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock296

More on Order

NSM11156DW6T1G
NSM11156DW6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PNP PREBIAS/PNP 0.23W SC88

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 PNP Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 65V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock214

More on Order