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Transistors

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RN2904FE(T5L,F,T)
RN2904FE(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock383

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RN2904,LF
RN2904,LF

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock157

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RN2904,LF(CT
RN2904,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock382

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RN2904(T5L,F,T)
RN2904(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock376

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RN2905FE,LF(CT
RN2905FE,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock294

More on Order

RN2905,LF(CT
RN2905,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock332

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RN2906FE,LF(CT
RN2906FE,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: *
In Stock415

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RN2906FE(TE85L,F)
RN2906FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock351

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RN2906,LF
RN2906,LF

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock4,154

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RN2906(T5L,F,T)
RN2906(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock362

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RN2907FE,LF(CT
RN2907FE,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock4,855

More on Order

RN2907,LF(CT
RN2907,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: *
In Stock141

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RN2907(T5L,F,T)
RN2907(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock477

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RN2908FE(TE85L,F)
RN2908FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock4,886

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RN2908,LF(CT
RN2908,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: *
In Stock270

More on Order

RN2908(T5L,F,T)
RN2908(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock457

More on Order

RN2909FE(TE85L,F)
RN2909FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock5,587

More on Order

RN2909,LF(CT
RN2909,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PNPX2 BRT Q1BSR47KOHM Q1BER22KOH

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: *
In Stock243

More on Order

RN2909(T5L,F,T)
RN2909(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock418

More on Order

RN2910FE,LF(CT
RN2910FE,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock5,306

More on Order

RN2910,LF(CT
RN2910,LF(CT

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: *
In Stock242

More on Order

RN2910(T5L,F,T)
RN2910(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock339

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RN2911FE(TE85L,F)
RN2911FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock478

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RN2911,LF
RN2911,LF

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock3,834

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RN2911(T5L,F,T)
RN2911(T5L,F,T)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock409

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RN2961FE(TE85L,F)
RN2961FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock327

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RN2961(TE85L,F)
RN2961(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock284

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RN2962FE(TE85L,F)
RN2962FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock258

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RN2962(TE85L,F)
RN2962(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.2W US6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
In Stock148

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RN2963FE(TE85L,F)
RN2963FE(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.1W ES6

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
In Stock333

More on Order