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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 30/110
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 |
In Stock367 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 200 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock483 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT883 |
In Stock373 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: SC-101, SOT-883 |
Supplier Device Package: DFN1006-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock448 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock447 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock441 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 |
In Stock297 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 |
In Stock283 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock262 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock332 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W S-MINI |
In Stock455 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: S-Mini |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 100MW ML3-N2 |
In Stock235 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SC-101, SOT-883 |
Supplier Device Package: ML3-N2 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW ML3-N2 |
In Stock275 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SC-101, SOT-883 |
Supplier Device Package: ML3-N2 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP DIGITAL TRANSISTOR (CORRESPO |
In Stock489 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VMT3 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP -500MA -50V DIGITAL TRANSIST |
In Stock191 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SST3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 260MW SOT723 |
In Stock451 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 260mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SOT-723 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIASTRANSISTORSOT323 |
In Stock395 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 330mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323 T&R 3K |
In Stock186 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 330mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIASTRANSISTORSOT323 |
In Stock398 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 330mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM |
In Stock452 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SSM |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V 0.15W VESM |
In Stock466 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VESM |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 |
In Stock264 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 |
In Stock316 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.2W UMT3F |
In Stock379 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 60mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: UMT3F |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 |
In Stock168 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 |
In Stock387 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523 |
In Stock112 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-523 |
Supplier Device Package: SOT-523 |
|
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPNDIGITALTRANSISTORSSOT-523 |
In Stock384 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-523 |
Supplier Device Package: SOT-523 |
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|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 |
In Stock424 More on Order |
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Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V 0.2W UMT3F |
In Stock306 More on Order |
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Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 30mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: UMT3F |