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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 144/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 25A TO247 |
In Stock419 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 25A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A |
Current - Collector Cutoff (Max): 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V |
Power - Max: 125W |
Frequency - Transition: 3MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-247-3 |
Supplier Device Package: TO-247 |
|
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 350V 15A TO-3PF |
In Stock444 More on Order |
|
Series: Automotive |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 15A |
Voltage - Collector Emitter Breakdown (Max): 350V |
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A |
Current - Collector Cutoff (Max): 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V |
Power - Max: 65W |
Frequency - Transition: - |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-3PF |
Supplier Device Package: TO-3PF |
|
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|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 2A TO-66 |
In Stock493 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A |
Current - Collector Cutoff (Max): 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V |
Power - Max: 35W |
Frequency - Transition: 10MHz |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-213AA, TO-66-2 |
Supplier Device Package: TO-66 |
|
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|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 45V 0.1A SOT1215 |
In Stock450 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 280mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-XDFN Exposed Pad |
Supplier Device Package: DFN1010D-3 |
|
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|
Comchip Technology |
Transistors - Bipolar (BJT) - Single TRANS PNP 65V 100A SOT23 |
In Stock159 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 65V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2.2mA, 5V |
Power - Max: 250mW |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
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|
Comchip Technology |
Transistors - Bipolar (BJT) - Single TRANS PNP 65V 100A SOT323 |
In Stock412 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 65V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2.2mA, 5V |
Power - Max: 150mW |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Comchip Technology |
Transistors - Bipolar (BJT) - Single TRANS PNP 45V 100MA SOT323 |
In Stock390 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2.2mA, 5V |
Power - Max: 150mW |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.1A SMINI3 |
In Stock329 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V |
Power - Max: 150mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: SMini3-F2-B |
|
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|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 1A 3DFN |
In Stock308 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V |
Power - Max: 1W |
Frequency - Transition: 180MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-XDFN Exposed Pad |
Supplier Device Package: DFN1010D-3 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 2A SOT23 |
In Stock162 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Power - Max: 480mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.1A SSMINI3 |
In Stock219 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V |
Power - Max: 125mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: SSMini3-F3-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A MINI3 |
In Stock129 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V |
Power - Max: 200mW |
Frequency - Transition: 160MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B-B |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A SMINI |
In Stock173 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V |
Power - Max: 150mW |
Frequency - Transition: 160MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: SMini3-F2-B |
|
|
|
Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A SOT23 |
In Stock324 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V |
Power - Max: 350mW |
Frequency - Transition: 150MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A MINIP3 |
In Stock484 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 150mA, 10V |
Power - Max: 1W |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: MiniP3-F2-B |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single TRANS PNP 20V 2.5A SOT89 |
In Stock238 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 2.5A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2.5A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V |
Power - Max: 2W |
Frequency - Transition: 180MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: SOT-89-3 |
|
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single TRANS PNP 12V 4A SOT23-6 |
In Stock392 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 4A |
Voltage - Collector Emitter Breakdown (Max): 12V |
Vce Saturation (Max) @ Ib, Ic: 175mV @ 400mA, 4A |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V |
Power - Max: 1.1W |
Frequency - Transition: 55MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-23-6 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 4A TO-126 |
In Stock280 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 4A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V |
Power - Max: 36W |
Frequency - Transition: 3MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-225AA, TO-126-3 |
Supplier Device Package: TO-126-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 45V 4A TO-126 |
In Stock393 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 4A |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A |
Current - Collector Cutoff (Max): 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V |
Power - Max: 40W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-225AA, TO-126-3 |
Supplier Device Package: TO-126-3 |
|
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 1A TO-220 |
In Stock203 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A |
Current - Collector Cutoff (Max): 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V |
Power - Max: 2W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 |
Supplier Device Package: TO-220AB |
|
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 180V 8A TO-220FP |
In Stock161 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 8A |
Voltage - Collector Emitter Breakdown (Max): 180V |
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A |
Current - Collector Cutoff (Max): 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V |
Power - Max: 37W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 Full Pack |
Supplier Device Package: TO-220FP |
|
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS NPN 750V 12A ISOWATT218FX |
In Stock304 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 12A |
Voltage - Collector Emitter Breakdown (Max): 750V |
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.5A, 6A |
Current - Collector Cutoff (Max): 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 6A, 5V |
Power - Max: 62W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: ISOWATT218FX |
Supplier Device Package: ISOWATT-218FX |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-50V IC-0.15A |
In Stock138 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-50V IC-0.15A |
In Stock286 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.15A H |
In Stock313 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single BC807-25H/SOT23/TO-236AB |
In Stock346 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V |
Power - Max: 320mW |
Frequency - Transition: 80MHz |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single BC807-40H/SOT23/TO-236AB |
In Stock408 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V |
Power - Max: 320mW |
Frequency - Transition: 80MHz |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO120V IC0.1A H |
In Stock404 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.15A H |
In Stock122 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Single BC807-40H/SOT23/TO-236AB |
In Stock301 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V |
Power - Max: 320mW |
Frequency - Transition: 80MHz |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |