Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.1A S-MINI |
In Stock418 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V |
Power - Max: 150mW |
Frequency - Transition: 100MHz |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236 |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-45V IC-0.5A |
In Stock228 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-45V IC-0.5A |
In Stock402 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.5A HF |
In Stock128 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.5A HF |
In Stock482 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-30V IC-0.5A |
In Stock172 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS PNP 120V 0.1A S-MINI |
In Stock346 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V |
Power - Max: 150mW |
Frequency - Transition: 100MHz |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: S-Mini |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-15V IC-0.8A |
In Stock333 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single TRANS NPN 20V 2A SOT-23 |
In Stock332 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V |
Power - Max: 600mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
|
|
Micro Commercial Co |
Transistors - Bipolar (BJT) - Single NPNGENERALPURPOSEAMPLIFIERSOT-22 |
In Stock284 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 1W |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC1A HFE4 |
In Stock168 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-20V IC-2.5A |
In Stock259 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-50V IC-1.7A |
In Stock273 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC2.5A HF |
In Stock394 More on Order |
|
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS NPN 400V 3A TO-92 |
In Stock184 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A |
Current - Collector Cutoff (Max): 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V |
Power - Max: 2.8W |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92AP |
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A SOT-223 |
In Stock399 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V |
Power - Max: 1.6W |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single TRANS PNP 20V 3.5A 3-DFN |
In Stock307 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3.5A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A |
Current - Collector Cutoff (Max): 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V |
Power - Max: 3W |
Frequency - Transition: 180MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-UDFN |
Supplier Device Package: DFN2020B-3 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock404 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V |
Power - Max: 900mW |
Frequency - Transition: 240MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock248 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 175MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock275 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 175MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock238 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V |
Power - Max: 900mW |
Frequency - Transition: 160MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock273 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock112 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 140MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock399 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 140MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single 60V 3A POWER TRANSISTOR FOR HIGH |
In Stock124 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V |
Power - Max: 500mW |
Frequency - Transition: 180MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: MPT3 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock145 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 1A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single PWR MID PERF TRANSISTOR POWERDI3 |
In Stock293 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V |
Power - Max: 900mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PowerDI3333-8 |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 3A PW MOLD |
In Stock218 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V |
Power - Max: 10W |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: PW-MOLD |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 400V 1A DPAK-4 |
In Stock142 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 400V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V |
Power - Max: 1.56W |
Frequency - Transition: 10MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: DPAK |
|
|
Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single NPN DRIVER TRANSISTOR |
In Stock128 More on Order |
|
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 6A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 3A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V |
Power - Max: 1W |
Frequency - Transition: 270MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-UDFN Exposed Pad |
Supplier Device Package: HUML2020L3 |