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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 366/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1A TO-92 |
In Stock243 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1A TO-92 |
In Stock340 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1A TO-92 |
In Stock195 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.8A TO-92 |
In Stock128 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.8A TO-92 |
In Stock355 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 25V 1A TO-92 |
In Stock161 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 60MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 25V 1A TO-92 |
In Stock318 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 60MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 25V 1A TO-92 |
In Stock494 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 25V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 60MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock327 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock320 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock135 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock488 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock257 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 150MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock155 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock412 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock243 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.5A TO-92 |
In Stock202 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 |
In Stock306 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 |
In Stock143 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-92 |
In Stock421 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 |
In Stock497 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 |
In Stock446 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 |
In Stock162 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 20V 1.2A TO-92 |
In Stock344 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 20V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock228 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock246 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock316 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock404 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock278 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock370 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |