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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 367/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock471 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 1.2A TO-92 |
In Stock323 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92 |
In Stock165 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92 |
In Stock321 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92 |
In Stock225 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92 |
In Stock317 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A TO-92 |
In Stock311 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A TO-92 |
In Stock440 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.1A TO-92 |
In Stock374 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 0.8A TO-92 |
In Stock406 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 0.8A TO-92 |
In Stock110 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 0.8A TO-92 |
In Stock309 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 0.8A TO-92 |
In Stock459 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 0.8A TO-92 |
In Stock248 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 0.8A TO-92 |
In Stock313 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 0.8A TO-92 |
In Stock368 More on Order |
|
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock112 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock186 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock332 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock483 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock407 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.5A TO-92 |
In Stock149 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.2A TO-92 |
In Stock181 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.2A TO-92 |
In Stock124 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.2A TO-92 |
In Stock284 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.2A TO-92 |
In Stock281 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.5A TO-92 |
In Stock391 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.5A TO-92 |
In Stock432 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.5A TO-92 |
In Stock193 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.5A TO-92 |
In Stock491 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |