Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS PNP 3A 100V TO220-3 |
In Stock453 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A |
Current - Collector Cutoff (Max): 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V |
Power - Max: 2W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 Full Pack |
Supplier Device Package: TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS PNP 3A 100V TO220-3 |
In Stock415 More on Order |
|
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 3A |
Voltage - Collector Emitter Breakdown (Max): 100V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A |
Current - Collector Cutoff (Max): 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V |
Power - Max: 2W |
Frequency - Transition: - |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-3 Full Pack |
Supplier Device Package: TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 400MA 80V TO226-3 |
In Stock118 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 400mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V |
Power - Max: 800mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 400MA 80V TO226-3 |
In Stock135 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 400mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V |
Power - Max: 800mW |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock281 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock401 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock226 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock388 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock390 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock386 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock376 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock292 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock312 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock107 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock463 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock426 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock480 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock105 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock293 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock408 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock345 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock466 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock160 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3 |
In Stock496 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Power - Max: 800mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock440 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock334 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock499 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock158 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock400 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3 |
In Stock244 More on Order |
|
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V |
Power - Max: 900mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body |
Supplier Device Package: TO-92MOD |