Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 425/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1931,NSEIKIQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock473 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock238 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,SINFQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock227 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1972,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 500MA 400V TO226-3	In Stock344 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 400V	Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: 35MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA1972,T6WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 500MA 400V TO226-3	In Stock126 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 400V	Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: 35MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-O(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock327 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y(JVC1,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock330 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y(T6JVC1,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock283 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y(T6ONK1,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock256 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y(T6SHRP,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock269 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock257 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock180 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y,ONK-1F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock126 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA949-Y,ONK-1F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50MA 150V TO226-3	In Stock171 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA965-O(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock480 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-O,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock402 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y(F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock162 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock324 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock144 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y,SWFF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock261 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock396 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SA965-Y,T6KOJPF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 800MA 120V TO226-3	In Stock139 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SB1375,CLARIONF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 60V TO220-3	In Stock195 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V	Power - Max: 2W	Frequency - Transition: 9MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SB1457(T6CANO,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock294 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1457(T6CNO,A,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock328 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock445 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1457(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock377 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1457,T6TOTOF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock207 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1457,T6YMEF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 100V TO226-3	In Stock420 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SB1481(TOJS,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 4A 100V TO220-3	In Stock369 More on Order	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 4A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A	Current - Collector Cutoff (Max): 2µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS

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