Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 60V SM8 |
In Stock7,070 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel (H-Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A |
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-223-8 |
Supplier Device Package: SM8 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 35A |
In Stock4,065 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 35A |
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V |
Power - Max: 2.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Power56 |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK8X8 |
In Stock4,933 More on Order |
|
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 63A (Tc) |
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V |
Power - Max: 71W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 8 x 8 Dual |
Supplier Device Package: PowerPAK® 8 x 8 Dual |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A 8SOIC |
In Stock5,292 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 15A |
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V |
Power - Max: 2.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.4A 1212-8 |
In Stock14,274 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 6.3A 8-SOIC |
In Stock3,944 More on Order |
|
Series: TrenchFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.3A |
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 64A/145A PQFN |
In Stock4,830 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 64A, 145A |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V |
Power - Max: 31W, 50W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PQFN (5x6) |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 32A 8LSON |
In Stock3,949 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 32A |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 8V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (5x6) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 13A/26A 3.3MM |
In Stock4,216 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A, 26A |
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V |
Power - Max: 800mW, 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Powerclip-33 |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 15A 8SON |
In Stock2,696 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A |
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V |
Power - Max: 6W |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-VSON (3.3x3.3) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 12A/16A POWER56 |
In Stock4,659 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A, 16A |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-MLP (5x6), Power56 |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 25A |
In Stock2,468 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V |
Power - Max: 6W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (3.3x3.3) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 100V/80V 12-MLP |
In Stock4,446 More on Order |
|
Series: GreenBridge™ PowerTrench® |
FET Type: 2 N and 2 P-Channel (H-Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V, 80V |
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A |
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-WDFN Exposed Pad |
Supplier Device Package: 12-MLP (5x4.5) |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 30V 8WSON |
In Stock3,316 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V |
Power - Max: 2.7W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-WSON (3.3x3.3) |
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID |
In Stock40,169 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
In Stock16,834 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 2.6A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 8.7A TO-220FP |
In Stock1,748 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 8.7A |
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id: 4.9V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V |
Power - Max: 18W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-5 Full Pack |
Supplier Device Package: TO-220-5 Full-Pak |
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 250V 1.1A 8VDFN |
In Stock525 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 1.1A |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-VDFN Exposed Pad |
Supplier Device Package: 8-DFN (5x5) |
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 10.6V 8DIP |
In Stock566 More on Order |
|
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 14DIP |
In Stock2,152 More on Order |
|
Series: - |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: 14-PDIP |
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 10.6V 14DIP |
In Stock1,437 More on Order |
|
Series: - |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: 14-PDIP |
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 10.6V 14DIP |
In Stock1,382 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: 14-PDIP |
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS SYMMETRICAL HALF BRIDG |
In Stock14,622 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 23A |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 60V 5A 15-SIP |
In Stock1,269 More on Order |
|
Series: - |
FET Type: 4 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
Power - Max: 4.8W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
|
|
EPC |
Transistors - FETs, MOSFETs - Arrays GAN TRANS SYMMETRICAL HALF BRIDG |
In Stock13,092 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 28A |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
|
|
Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 5N-CH 60V 10A 12-SIP |
In Stock1,496 More on Order |
|
Series: - |
FET Type: 5 N-Channel, Common Source |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
|
|
Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 60V 5A 15-SIP |
In Stock679 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 10.6V 14DIP |
In Stock403 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 14-DIP (0.300", 7.62mm) |
Supplier Device Package: 14-PDIP |
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N/6P-CH 200V 56VQFN |
In Stock809 More on Order |
|
Series: - |
FET Type: 6 N and 6 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 56-VFQFN Exposed Pad |
Supplier Device Package: 56-QFN (8x8) |
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 29.5A MODULE |
In Stock261 More on Order |
|
Series: Z-Rec® |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc) |
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V |
Power - Max: 167W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |