Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 120A MODULE |
In Stock527 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 2.7V @ 22mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V |
Power - Max: 780W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: - |
Package / Case: Module |
Supplier Device Package: Module |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 170MA 6TSSOP |
In Stock3,968 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V |
Power - Max: 325mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.17A SC-88 |
In Stock14,492 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 170mA |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V |
Power - Max: 220mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA US6 |
In Stock35,582 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
Power - Max: 300mW |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.1A VMT6 |
In Stock10,665 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V |
Power - Max: 120mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: VMT6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.18A ES6 |
In Stock5,680 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 180mA |
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
In Stock5,841 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA |
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 0.24A SOT363 |
In Stock3,682 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 240mA |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V |
Power - Max: 300mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT-563 |
In Stock3,980 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 305mA |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 250mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.65A SOT363 |
In Stock4,089 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 650mA |
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V |
Power - Max: 290mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.1A SMINI6-F3 |
In Stock9,542 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: SMini6-F3-B |
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Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 350MA 6TSSOP |
In Stock4,113 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V |
Power - Max: 445mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.6A/0.5A 6DFN |
In Stock91,812 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel Complementary |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA |
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V |
Power - Max: 265mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: DFN1010B-6 |
|
|
Nexperia |
Transistors - FETs, MOSFETs - Arrays 20 V, DUAL P-CHANNEL TRENCH MOSF |
In Stock8,022 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 500mA |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
Power - Max: 380mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: DFN1010B-6 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 50V 0.13A SOT-563 |
In Stock4,390 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 130mA |
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V |
Power - Max: 150mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.3A 6UDFN |
In Stock13,728 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V |
Power - Max: 730mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UDFN Exposed Pad |
Supplier Device Package: U-DFN2020-6 (Type B) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT563F |
In Stock4,425 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563F |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A SOT-457 |
In Stock4,491 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V |
Power - Max: 300mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-74, SOT-457 |
Supplier Device Package: SMT6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 2-1Y1A |
In Stock4,102 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V |
Power - Max: 1W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-UDFN (2x2) |
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|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4A UDFN6 |
In Stock4,487 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-UDFN (2x2) |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SC-89 |
In Stock15,348 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA |
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SC-89-6 |
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Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V 5.8A 6TDFN |
In Stock12,003 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) |
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V |
Power - Max: 620mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VDFN Exposed Pad |
Supplier Device Package: 6-TDFN (2x2) |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT563 |
In Stock4,753 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 280mA |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: 350mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V U-DFN2030-6 |
In Stock7,492 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.7A |
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UFDFN Exposed Pad |
Supplier Device Package: U-DFN2030-6 (Type B) |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.3A UDFN6 |
In Stock20,590 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.3A |
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UFDFN Exposed Pad |
Supplier Device Package: 6-UDFN (1.6x1.6) |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9A 6-UDFN |
In Stock4,712 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A |
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V |
Power - Max: 800mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UFDFN Exposed Pad |
Supplier Device Package: U-DFN2030-6 (Type B) |
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|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/6A 8DFN |
In Stock8,020 More on Order |
|
Series: - |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 6A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V |
Power - Max: 2.1W, 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SMD, Flat Lead |
Supplier Device Package: 8-DFN (2.9x2.3) |
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|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 20V 2.2A SOT26 |
In Stock44,151 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) |
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V |
Power - Max: 1.15W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-26 |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 |
In Stock19,653 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA |
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V |
Power - Max: 350mW |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8.2A/6.2A 8SO |
In Stock6,890 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A |
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V |
Power - Max: 1.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |